Quartz Tube Furnace for Precise High‑Temperature Processes

Quartz Tube Furnace High Temperature

The sustainable solution for high‑temperature processes in the semiconductor and microelectronics industry. The quartz glass process chamber ensures exceptional chemical purity and outstanding temperature resistance, while the high‑precision temperature control enables even the most demanding processes with maximum reproducibility.

With state‑of‑the‑art control technology, our furnace provides superior stability, efficiency, and flexibility for a wide range of industrial applications — from research and development to high‑volume production. The intelligent control system ensures reliable process monitoring, intuitive operation, and optimal adaptation to individual requirements.

Applications

  • Annealing and tempering
  • Thermal oxidation: dry and wet
  • Diffusion processes
  • Polyimide imidization / thermal cure
  • Thin‑film and substrate processing
  • Ceramic and glass material studies
  • Glass frit processing
  • Heat treatment of inorganic substrates
  • Vacuum and controlled‑atmosphere processes
  • Thick‑film pastes
Applications Applications

Technological Highlights

Technological Highlights
  • Highest precision: Temperature ranges up to 1100°C, homogeneous temperature profiles
  • Modern control system: Bosch Rexroth PLC, Industry 4.0 ready, long-term availability
  • Flexible process control: Multi-zone heating, defined gas atmospheres, ramp profiles
  • Sustainable modernization: Retrofit of existing furnaces with new electronics & sensors

Technical Data

  • Dimensions (W × D × H): 1000 × 1000 × 1650 mm
  • Weight: approx. 250 kg
  • Maximum process temperature: up to 1100 °C
  • Process area: Ø 230 mm × 350 mm (L)
  • Suitable for: wafers up to 200 mm, ceramic substrates, and other temperature‑stable materials
  • Loading example: 100 × 150 mm silicon wafers
  • Temperature performance: control accuracy ±0.5 K
  • Optional profiling: down to ±2.5 K across full wafer loads
  • Process atmosphere & pressure range:
  • • Supported gases: inert gases, oxygen, water vapor, forming gas (≤ 5% H₂)
    • Pressure range: from atmosphere down to high vacuum at 5 × 10⁻⁶ mbar
    • In‑situ monitoring of residual oxygen levels throughout the process
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